Research Article

Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures

Figure 4

(a) TE-polarized spontaneous emission spectra and (b) peak intensities as a function of sheet carrier density for type-I InxGaN/GaN and type-II InxGa1−xN/GaN1−ySby/GaN (, ) QW structures.
(a)
(b)