Research Article
Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures
Figure 4
(a) TE-polarized spontaneous emission spectra and (b) peak intensities as a function of sheet carrier density for type-I InxGaN/GaN and type-II InxGa1−xN/GaN1−ySby/GaN (, ) QW structures.
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