Research Article
Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures
Figure 5
Potential energy profile for (a) the type-II InGaN/GaN1−ySby/GaN QW structure ( = 0.3 and = 0.08) and (b) TE-polarized spontaneous emission spectra of both the type-I and type-II QW structures. The inset shows the TE-polarized optical matrix element for the type-II InxGaN/GaN1−ySb/GaN QW structure ( = 0.3, = 0.08).
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