Research Article

Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures

Figure 5

Potential energy profile for (a) the type-II InGaN/GaN1−ySby/GaN QW structure ( = 0.3 and  = 0.08) and (b) TE-polarized spontaneous emission spectra of both the type-I and type-II QW structures. The inset shows the TE-polarized optical matrix element for the type-II InxGaN/GaN1−ySb/GaN QW structure ( = 0.3,  = 0.08).
(a)
(b)