Advances in Condensed Matter Physics

Band Structure Dependent Physical Properties of Quantized Systems


Publishing date
01 Oct 2021
Status
Closed
Submission deadline
04 Jun 2021

1Institute of Engineering and Management, Kolkata, India

2University of Calcutta, Kolkata, India

3Indian Institute of Engineering Science And Technology, Howrah, India

This issue is now closed for submissions.
More articles will be published in the near future.

Band Structure Dependent Physical Properties of Quantized Systems

This issue is now closed for submissions.
More articles will be published in the near future.

Description

The unification of the concept of asymmetry of the wave vector space of the charge carriers in semiconductors with modern fabrication techniques such as Molecular Beam Epitaxy, Metallo-Organic-Chemical-Vapor Deposition and Fine Line Lithography in one, two and three dimensions (such as quantum wells, inversion and accumulation layers, quantum well super-lattices, nipi structures, carbon nano-tubes, nano wires, quantum wire super-lattices, quantum box, magneto inversion and accumulation layers, quantum dot super-lattices, etc.) provides not only useful quantum effect devices, but also unearths new concepts in the realm of Condensed Matter Physics and related disciplines. It is worth remarking that these semiconductor nanostructures occupy a paramount position in the entire arena of low dimensional science and technology by their own right and find extensive applications.

The concept of band structure dependent properties (BSDS) is of fundamental importance for not only the characterization of Electronic Materials, but also the study of the Electron transport in them and their quantized counter parts through the proper formulation of the Boltzmann Transport equation which, in turn, needs the corresponding band structure. This is still an ongoing research problem. It is important to note that six transport quantities, namely, the effective carrier mass, density-of-state (DOS) function, the sub-band energy, and the measurement of band-gap in the presence of strong light waves, intense electric field and heavy doping are in disguise in the important concept of BSDS. Additionally, the acoustic mobility, limited momentum relaxation time is inversely proportional to the respective DOS function of a particular electronic material. Integral over the DOS function leads to carrier statistics under the condition of extreme carrier degeneracy which, in turn, is connected to the few important transport topics of quantum effect devices made of electronic materials. These topics include: the Landau Dia and Pauli’s Para Magnetic Susceptibilities, the Einstein’s Photoemission, the Einstein Relation, the Generalized Raman gain, the Fowler-Nordheim Field Emission, the Gate Capacitance, the Thermoelectric Power, the Magneto-Thermal effect in Quantized Structures, the Nonlinear optical response, the Third order nonlinear optical susceptibility, the Righi-Leduc coefficient, the Electric Susceptibility, the Electric Susceptibility Mass, the Electron Diffusion Thermo-power, and the Hydrostatic Piezo-resistance Coefficient.

The aim of this Special Issue is to collate original research and review articles concerning these issues in band structure dependent physical properties of quantized systems. Emphasis will be on both theoretical and experimental research works leading to new concepts.

Potential topics include but are not limited to the following:

  • Band structures
  • Quantized structures
  • Study of transport phenomena
  • Thermo-dynamical properties
  • Optical properties
  • Thermal properties
  • Electronic properties
  • Quantum magnetism
  • Bose-Einstein condensates
  • Synthesis of new quantum materials
Advances in Condensed Matter Physics
 Journal metrics
Acceptance rate48%
Submission to final decision25 days
Acceptance to publication66 days
CiteScore2.100
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Impact Factor1.845
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