Table of Contents
Advances in Electronics
Volume 2014 (2014), Article ID 246769, 12 pages
http://dx.doi.org/10.1155/2014/246769
Review Article

InAs/GaSb Type-II Superlattice Detectors

1Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, USA
2Skinfrared, LLC, Lobo Venture Lab 801, University Boulevard, Suite 10, Albuquerque, NM 87106, USA

Received 5 January 2014; Accepted 19 March 2014; Published 10 April 2014

Academic Editor: Meiyong Liao

Copyright © 2014 Elena A. Plis. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.