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Advances in Electronics
Table of Contents
Advances in Electronics
/
2014
/
Article
/
Fig 1
/
Review Article
FinFETs: From Devices to Architectures
Figure 1
DIBL and subthreshold swing (
) versus effective channel length for double-gate (DG) and bulk-silicon nFETs. The DG device is designed with an undoped body and a near-mid-gap gate material [
12
].