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Gröning, A.; Pérez-Solórzano, V.; Jetter, M.; Schweizer, H.

doi:https://doi.org/10.1155/2007/69568

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Research Article | Open Access

Volume 2007 | Article ID 069568 | https://doi.org/10.1155/2007/69568

Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN Quantum Structures

A. Gröning,¹V. Pérez-Solórzano,¹M. Jetter,¹and H. Schweizer¹

Academic Editor: Ralf B. Bergmann

Received10 Sept 2006

Revised07 Jan 2007

Accepted08 Jan 2007

Published08 Mar 2007

Abstract

The optical properties of metal-organic vapor phase epitaxy grown AlyInxGa1−x−yN quantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

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Copyright

Copyright © 2007 A. Gröning et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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