PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells
Figure 6
Effective surface recombination velocities of PECVD stacks of Si + Si (left red columns) and Si, Si and Si (right green striped columns, PECVD-ONO) as-deposited, after annealing (425°C, 15 min, forming gas) or firing (850°C, 3 s).
