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Advances in OptoElectronics
Volume 2010, Article ID 487406, 8 pages
http://dx.doi.org/10.1155/2010/487406
Research Article

PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

Centre for Sustainable Energy System, School of Engineering, The Australian National University, Building 32 North Road, Acton, Canberra 0200, Australia

Received 9 March 2010; Accepted 10 June 2010

Academic Editor: Chang Sun

Copyright © 2010 Natalita M. Nursam et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Natalita M. Nursam, Yongling Ren, and Klaus J. Weber, “PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties,” Advances in OptoElectronics, vol. 2010, Article ID 487406, 8 pages, 2010. https://doi.org/10.1155/2010/487406.