PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 10
as a function of charge density of and B diffused planar samples with different surface boron concentration (SBC). “Low” and “high” SBC refers to = 018 and 019 cm-3 on samples, respectively. All samples were annealed in prior to charge deposition. Measurements were taken at an injection level 015 cm-3.
