PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 5
Plots of Auger corrected-inverse lifetime as a function of injection level measured on a PECVD SiNx passivated n-type, oriented Si sample. The films were deposited at 400°C. The inserted numbers represent the sequence of the charging steps. Black-straight line represents the initial measurement which is followed by consecutive negative charge deposition (red-circle), rinse in IPA (black-circles), positive charge deposition (blue-squares), and another rinse in IPA (black squares).
