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Advances in OptoElectronics
Volume 2011, Article ID 143235, 7 pages
Research Article

Numerical Modeling and Experimental Investigation of the Nonlinear Polarization Rotation Phenomenon in Semiconductor Optical Amplifiers

Sys'Com Laboratory, National Engineering School of Tunis (ENIT), B.P. 37 Le Belvedere 1002, Tunis, Tunisia

Received 4 April 2011; Revised 23 August 2011; Accepted 17 September 2011

Academic Editor: Jung Huang

Copyright © 2011 Youssef Said and Houria Rezig. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The focus of this paper is to analyze in detail the nonlinear polarization rotation phenomenon in the Semiconductor Optical Amplifier (SOA) according to the injection conditions. To this end, we have developed a numerical model based on the coupled mode theory and the formalism of Stokes. The obtained results are in agreement with the experimental measurements that have been carried out in free space, which allows optimum control and preservation of the polarization state of the injected and collected signals.