Numerical Modeling and Experimental Investigation of the Nonlinear Polarization Rotation Phenomenon in Semiconductor Optical Amplifiers

Table 1

SOA parameters used in simulation.

Symbol	Description	Value
𝐼bias	Bias Current	225 mA
𝑅1	Input facet reflectivity	5 · 10^−5
𝑅2	Output facet reflectivity	5 · 10^−5
L	Active layer length	500 μm
W	Active layer width	2.5 μm
d	Active layer thickness	0.2 μm
ΓTM/ΓTE	TM/TE optical confinement factor ratio	0.6
𝑣𝑔	Group velocity	75 · 10^6 m/s
𝑁0	Carrier density at transparency	1.5 · 10^24 m^−3
𝑛𝑟	Active refractive index	3.7