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Advances in OptoElectronics
Volume 2011 (2011), Article ID 145012, 8 pages
Research Article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Department of Physics, Lancaster University, Lancaster LA1 4YB, UK

Received 23 April 2011; Revised 10 June 2011; Accepted 5 July 2011

Academic Editor: Yuh-Jen Cheng

Copyright © 2011 P. J. Carrington et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.