Table of Contents Author Guidelines Submit a Manuscript
Advances in OptoElectronics
Volume 2011 (2011), Article ID 459130, 6 pages
Research Article

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

1Solid State Infrared Devices, Electron, Central Research Institute, Toreza Avenue, 68, Saint-Petersburg 194223, Russia
2Broadband Home Solutions, Motorola Mobility, Sedova Street 12, Saint-Petersburg 192019, Russia

Received 7 April 2011; Revised 25 May 2011; Accepted 4 July 2011

Academic Editor: Satishchandra B. Ogale

Copyright © 2011 V. G. Ivanov and G. V. Ivanov. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED) take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB) as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.