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Advances in OptoElectronics
Volume 2011 (2011), Article ID 915123, 5 pages
Research Article

CdS-Sensitized ZnO Nanorod Photoelectrodes: Photoelectrochemistry and Photoinduced Absorption Spectroscopy

CRC, Department of Optometry, College of Applied Medical Sciences, King Saud University, Riyadh 11433, Saudi Arabia

Received 15 June 2011; Accepted 25 July 2011

Academic Editor: Surya Prakash Singh

Copyright © 2011 Idriss Bedja. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Thin films of ZnO semiconductor nanorods (ZnO-nr) of 6 μm length and thin ZnO nanoparticulate films (ZnO-np) have been prepared and modified with Q-dots CdS for comparison study. PIA (photoinduced absorption spectroscopy), a multipurpose tool in the study of dye-sensitized solar cells, is used to study a quantum-dot-modified metal-oxide nanostrucutred electrode. Q-dot CdS-sensitized ZnO-nr (1D network) sensitized photoelectrode has demonstrated best performances in both photoelectrical response (IPCE max = 92%) and broadening response into far visible comparing to ZnO-np-based CdS solar cell. Preadsorbing ZnO-nr with ZnO-np does not bring further improvement. Time constant for electron injection into ZnO-nr conduction band was relatively fast decay of 6.5 ms, similar to TiO2-coated CdS, and proves at least a well pore filling of ZnO-nr film by ultrafine CdS particles. Unidirectional electron transfer mechanistic in ZnO-nr has played a major role in these performances.