Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application
Figure 5
(a) Raman spectra of Ge-Sb alloy thin films deposited on borosilicate glass substrates at the reaction temperatures ranging from 750°C to 875°C. (b) Raman spectrum of crystallized eutectic Ge-Sb thin film.
