Advances in OptoElectronics / 2012 / Article / Fig 1

Research Article

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Figure 1

Schematic cross-section of a Ge p-i-n heterojunction photodiode (left). The right figure shows a microscopy image of a complete device structure with typically ground signal ground contacts. The mesa diameter of the diode and the diameter of the optical window amount 160 μm and 100 μm, respectively.
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