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Advances in OptoElectronics
Volume 2013, Article ID 568945, 4 pages
http://dx.doi.org/10.1155/2013/568945
Research Article

Burn-In Aging Behavior and Analytical Modeling of Wavelength-Division Multiplexing Semiconductor Lasers: Is the Swift Burn-In Feasible for Long-Term Reliability Assurance?

Emcore, Broadband Division, 2015 W. Chestnut Street, Alhambra, CA 91803, USA

Received 16 September 2013; Revised 7 November 2013; Accepted 8 November 2013

Academic Editor: Michele Norgia

Copyright © 2013 Jia-Sheng Huang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, Wiley, 2nd edition, 2007, Chapter 22.
  2. J.-S. Huang, “Design-in reliability of modern distributed feedback (DFB) InP lasers: can we meet up the stringent wavelength-division multiplex (WDM) requirement?” in Proceedings of the IEEE Photonics Society Summer Topical Meeting Series, pp. 89–90, Montreal, Canada, July 2011. View at Publisher · View at Google Scholar · View at Scopus
  3. H. Takaaki, H. Mamoru, and N. Hideki, “Wavelength-stable laser diode and photodiode array for laser interferometer positioning systems,” Technical Report no. 32, Yokogawa, 2001. View at Google Scholar
  4. D. A. Cohen and L. A. Coldren, “Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MOW diode laser mounted on a bimetallic heatsink,” Electronics Letters, vol. 32, no. 24, pp. 2245–2247, 1996. View at Google Scholar · View at Scopus
  5. J.-S. Huang, T. Nguyen, W. Hsin, I. Aeby, R. Ceballo, and J. Krogen, “Reliability of etched-mesa buried-heterostructure semiconductor lasers,” IEEE Transactions on Device and Materials Reliability, vol. 5, no. 4, pp. 665–674, 2005. View at Publisher · View at Google Scholar · View at Scopus
  6. Telcordia Technologies, “Generic reliability assurance requirements for optoelectronic devices used in telecommunications equipment,” GR-468-CORE, Bellcore, 1998. View at Google Scholar
  7. S. P. Sim, “A review of the reliability of III–V opoelectronic components,” in Semiconductor Device Reliability, A. Christou and B. A. Ungar, Eds., vol. 175 of NATO ASI Series, pp. 301–3319, Kluwer Academic, Dodrecht, The Netherlands, 1990. View at Publisher · View at Google Scholar
  8. J.-S. Huang, “Temperature and current dependences of reliability degradation of buried heterostructure semiconductor lasers,” IEEE Transactions on Device and Materials Reliability, vol. 5, no. 1, pp. 150–154, 2005. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. Deshayes, L. Bechou, F. Verdier, and Y. Danto, “Long-term reliability prediction of 935 nm LEDs using failure laws and low acceleration factor ageing tests,” Quality and Reliability Engineering International, vol. 21, no. 6, pp. 571–594, 2005. View at Publisher · View at Google Scholar · View at Scopus
  10. M. S. Ab-Rahman and M. R. Hassan, “Theoretical analysis of the effect of temperature dependence of Auger coefficient on the turn-on time delay of uncooled semiconductor laser diodes,” Optics Communications, vol. 283, no. 11, pp. 2378–2384, 2010. View at Publisher · View at Google Scholar · View at Scopus
  11. S. K. K. Lam, R. E. Mallard, and D. T. Cassidy, “Analytical model for saturable aging in semiconductor lasers,” Journal of Applied Physics, vol. 94, no. 3, pp. 1803–1809, 2003. View at Publisher · View at Google Scholar · View at Scopus
  12. J. S. Huang, “Design-in reliability for modern wavelength-division multiplex (WDM) distributed feedback (DFB) InP lasers,” Applied Physics Research, vol. 4, no. 2, pp. 15–28, 2012. View at Google Scholar
  13. T. Westphalen, M. Leers, M. Werner, M. Traub, H. d. Hoffmann, and R. Ostendorf, “Packaging influence on laser bars of different dimensions,” in The 7th High-Power Diode Laser Technology and Applications, vol. 7198 of Proceedings of SPIE, San Jose, Calif, USA, 2009. View at Publisher · View at Google Scholar
  14. S. Landi, C. Papuzza, A. Piccirillo, D. Re, and L. Serra, “Characterisation of III–V optoelectronic devices by internal second-harmonic generation technique,” Applied Surface Science, vol. 143, no. 1, pp. 115–123, 1999. View at Publisher · View at Google Scholar · View at Scopus
  15. J.-P. Landesman, “Micro-photoluminescence for the visualisation of defects, stress and temperature profiles in high-power III–V's devices,” Materials Science and Engineering B, vol. 91-92, pp. 55–61, 2002. View at Publisher · View at Google Scholar · View at Scopus
  16. T. M. Alander, P. A. Heino, and E. O. Ristolainen, “Analysis of substrates for single emitter laser diodes,” Journal of Electronic Packaging, vol. 125, no. 3, pp. 313–318, 2003. View at Publisher · View at Google Scholar · View at Scopus