A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity
Figure 10
Field distribution at the cross-section of trapezoidal (a) and rectangular (b) nanograting assisted MSM-PDs besides conventional type device without nanogratings (c) at the subwavelength aperture. The calculated total electric field intensity distribution inside the GaAs substrate is shown using the following parameters: gold underlayer thickness of 60 nm, grating period of 810 nm, and the subwavelength aperture width of 50 nm.
