Research Article
Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices
Figure 4
(a) The characteristics for SST/nc-Si:H/Ag Schottky diodes. (b) The (I)-I curve for the same device. (c) The Cheung function current dependence.