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Advances in OptoElectronics
Volume 2013, Article ID 840931, 12 pages
http://dx.doi.org/10.1155/2013/840931
Research Article

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes

1Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
2Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata, West Bengal 700009, India

Received 23 November 2012; Accepted 15 January 2013

Academic Editor: Xian Cao

Copyright © 2013 Moumita Ghosh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Moumita Ghosh, Mangolika Mondal, and Aritra Acharyya, “The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes,” Advances in OptoElectronics, vol. 2013, Article ID 840931, 12 pages, 2013. https://doi.org/10.1155/2013/840931.