The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Figure 1

Cross-sectional view of the  𝑝⁺-𝑝-𝑛-𝑛⁺  structured Wz-GaN RAPDs for two optical illumination configurations: (a) TM structure (top 𝑝⁺-layer illuminated) and (b) FC structure (back 𝑛⁺-layer illuminated).

(a)

(b)