The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Figure 7

Variations of multiplication factors with reverse bias voltage in 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN RAPDs due to optical illumination (𝜆=365 nm) on the 𝑝⁺-layer (TM).