The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Figure 8

Variations electron and hole dominated photocurrents (for optical illumination of wavelength  𝜆=365 nm), total dark current, band-to-band tunneling current and trap-assisted tunneling current (for different trap centers) with reverse bias voltage in RAPD4.