The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Figure 9

Variations of unity gain spectral responsivities with wavelength in 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN RAPDs due to optical illuminated on the 𝑛⁺-layer (FC) for applied reverse bias of 85 V.