The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Table 1

Design parameters.

Illumination configuration	Symbol	𝑊𝑛+	𝑊𝑝+	𝑁𝑛+	𝑁𝑝+	𝑊𝑛	𝑊𝑝	𝑁𝐷	𝑁𝐴
		(μm)	(μm)	(×10^24 m^−3)	(×10^24 m^−3)	(μm)	(μm)	(×10^23 m^−3)	(×10^23 m^−3)
	RAPD1	0.500	0.150	5.00	5.00	0.440	0.435	2.50	2.60
TM	RADP2	0.500	0.150	5.00	5.00	0.440	0.435	2.40	2.50
	RAPD3	0.500	0.150	5.00	5.00	0.440	0.435	2.30	2.40
	RADP4	0.500	0.150	5.00	5.00	0.440	0.435	2.20	2.30
	RAPD1	0.200	0.150	5.00	5.00	0.440	0.435	2.50	2.60
FC	RADP2	0.200	0.150	5.00	5.00	0.440	0.435	2.40	2.50
	RAPD3	0.200	0.150	5.00	5.00	0.440	0.435	2.30	2.40
	RADP4	0.200	0.150	5.00	5.00	0.440	0.435	2.20	2.30