Table of Contents Author Guidelines Submit a Manuscript
Advances in OptoElectronics
Volume 2014, Article ID 293590, 5 pages
Research Article

Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany

Received 21 February 2014; Accepted 30 June 2014; Published 13 July 2014

Academic Editor: Michele Norgia

Copyright © 2014 Christoph Doering and Henning Fouckhardt. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4 -setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.