Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Figure 1

(a) Schematic band diagram of a -emitter/-barrier structure. is the multiplication of the energy distribution () and the FD function (). (i) and (ii) correspond to the nondegenerate and degenerate doping, respectively. IP processes labeled as and consist of optical transitions in the emitter and the escaping of holes from the emitter to the barrier. (b) DOS with and without the band tailing effect.

(a)

(b)