Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Figure 5

(a) Schematic of a pBp type-II InAs/GaSb superlattice photodetector. (b) Band alignment under forward and reverse biases and the effective optical transitions that contribute to photocurrents. (c) The experimental quantum yield spectra and IP fittings. The thresholds of optical transitions I–III can be obtained by fitting different energy regimes. Inset: comparison of fittings using different transmission probabilities.

(a)

(b)

(c)