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Advances in OptoElectronics
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Special Issues
Advances in OptoElectronics
/
2017
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Article
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Tab 1
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Research Article
Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics
Table 1
The temperature dependence of the mesa-type APD measured from 20°C to 145°C.
Wafer A
32.8 V
0.017 V/°C
5.1
10
−4
/°C
Wafer B
31.7 V
0.017 V/°C
5.5
10
−4
/°C