Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

Table 1

The temperature dependence of the mesa-type APD measured from 20°C to 145°C.

Wafer A	32.8 V	0.017 V/°C	5.1 10^−4/°C
Wafer B	31.7 V	0.017 V/°C	5.5 10^−4/°C