1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Figure 2

Photoluminescence (PL) spectra for the cases of GaSb growth with nominal coverages of 1-6 ML. The (single) peaks can be attributed to the occurrence of Ga(As)Sb QD, the always occurring double peak to excitonic levels of the pure GaAs buffer [32]. For 1 ML no QD peak is observed. The black curve in the inset is identical to the black curve in the main graph.