1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Figure 4

Photograph of the R450 MBE machine by DCA Oy, Turku, Finland, with the RAS system EpiRAS by Laytec, Berlin, Germany in front.