Active and Passive Electronic Components

Active and Passive Electronic Components / 1978 / Article

Open Access

Volume 5 |Article ID 971206 | https://doi.org/10.1155/APEC.5.113

R. A. Startin, A. C. Cross, "A Hybrid Thin-Film Logic Circuit Using Gallium Arsenide Field Effect Transistors", Active and Passive Electronic Components, vol. 5, Article ID 971206, 5 pages, 1978. https://doi.org/10.1155/APEC.5.113

A Hybrid Thin-Film Logic Circuit Using Gallium Arsenide Field Effect Transistors

Received15 Jul 1977

Abstract

High speed systems demand faster logic than current silicon bipolar technology can offer. Hybrid or monolithic circuits using gallium arsenide FETs provide an answer. The FETs require careful handling if electrical or mechanical damage is to be avoided. The problems of bonding a large number of these devices to a thin-film circuit to produce a working hybrid logic element are discussed. Techniques for their solution are given with reference to a completed experimental hybrid circuit.

Copyright © 1978 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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