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ElectroComponent Science and Technology
Volume 5, Issue 2, Pages 113-117
http://dx.doi.org/10.1155/APEC.5.113

A Hybrid Thin-Film Logic Circuit Using Gallium Arsenide Field Effect Transistors

P.O. Research Centre, Martlesham Heath, Ipswich IP5 7RE, UK

Received 15 July 1977

Copyright © 1978 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

High speed systems demand faster logic than current silicon bipolar technology can offer. Hybrid or monolithic circuits using gallium arsenide FETs provide an answer. The FETs require careful handling if electrical or mechanical damage is to be avoided. The problems of bonding a large number of these devices to a thin-film circuit to produce a working hybrid logic element are discussed. Techniques for their solution are given with reference to a completed experimental hybrid circuit.