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ElectroComponent Science and Technology
Volume 6, Issue 1, Pages 19-22
http://dx.doi.org/10.1155/APEC.6.19

Temperature Dependence of the Hall Coefficient of Thin Films

Universite de Nancy I, Laboratoire d'Electronique, C.O. 140, Nancy Cedex 54037, France

Received 17 October 1978

Copyright © 1979 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A theoretical expression for the temperature coefficient βRH of the Hall coefficient RHF of metallic films is deduced from the Fuchs–Sondheimer conduction model. The general expression takes into account the deviation introduced by the geometrical limitation of the mean free path. This is negligible for relatively thick films (k ≥ 1 for p = 0) and agrees with experiments previously reported by other authors.