The dependence of the breakdown voltage on the capacitor area has been examined by measurements on
Al-Al2O3-metal thin film capacitors. The relation of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>U</mml:mi><mml:mi>b</mml:mi></mml:msub><mml:mo>=</mml:mo><mml:mi>k</mml:mi><mml:msup><mml:mi>A</mml:mi><mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mtext>c</mml:mtext></mml:mrow></mml:mrow></mml:msup></mml:mrow></mml:math> has been found for the breakdown voltage v.s. area;
where c is one of the parameters describing the Weibull type of distribution.

Active and Passive Electronic Components

The Influence of the Area of a Thin Film Capacitor on the Breakdown Voltage

Abstract

Copyright