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Active and Passive Electronic Components
Volume 12 (1985), Issue 1, Pages 59-61

Comment on the Dependence of R and Current Noise on Grain Size in Thick Film Resistors (TFR's)

Zentralinstitut für Festkorperphysik und Werkstofforschung der Akademie der Vdissenschaften der DDR, Dresden DDR-8027, Germany

Received 3 September 1984; Accepted 6 November 1984

Copyright © 1985 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The heterogeneous structure of TFR's results in high resistivities and high current noise. Accepting models of conduction in TFR's, according to which the resistivity is determined by a resistance independent of bulk-resistivity of a metallic-like component, it will be shown, that R and Ceff*(describing current noise behaviour) increase with d and d3, respectively, when d is the grain size. On the other hand, both quantities depend on the volume fraction of the metallic component in the same manner. This leads to the conclusion, that a general dependence in the form Ceff*= f(R) cannot exist.