Effect of V₂O₅ Dopant on the Electrical Conductivity of RuO₂ Thick Film Resistors

Abstract

Thick film glaze resistors have been prepared using V₂O₅ doped RuO₂ conducting phase. Different amounts of V₂O₅ were incorporated into RuO₂lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fit in the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra charge carrier and K = 10^-3 mho-sq.