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Active and Passive Electronic Components
Volume 12 (1986), Issue 2, Pages 111-117
http://dx.doi.org/10.1155/1986/34249

Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors

Thick Film Materials, Physical Chemistry Division, National Chemical Laboratory, Pune 411 008, India

Copyright © 1986 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Thick film glaze resistors have been prepared using V2O5 doped RuO2 conducting phase. Different amounts of V2O5 were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fit in the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra charge carrier and K = 10-3 mho-sq.