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Active and Passive Electronic Components
Volume 12, Issue 3, Pages 191-200

High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

1Institute of Electron Technology of Wroclaw, Technical University, Janiszewskiego 11-17, Wroclaw 50-372, Poland
2High Pressure Research Centre, Polish Academy of Sciences, Sokolowska 29, Warsaw 01-142, Poland

Copyright © 1987 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.