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Volume 12, Issue 4, Pages 223-229

The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions

Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, Poland

Copyright © 1987 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.

It has been observed that independently of the growing solution composition, the epitaxial layers were single crystal of (100) crystallographic orientation. Bismuth and chromium were not identified as impurities in the investigated layers although this may be due to the low sensitivity (0.1 at . %) of the x-ray microprobe used.