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Active and Passive Electronic Components
Volume 14 (1990), Issue 2, Pages 47-52

Realization of Solar Cells Based on Silicon/Oxide Junctions

Laboratoire de Chimie du Solide du CNRS Université BORDEAUX I, 351 cours de la Libération, TALENCE cedex, 33405, France

Copyright © 1990 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Transparent and conductive films of SrTiO3 , ITO, and Tl2O3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8% has been obtained for Si/SiOx/Tl2O3 cells. On the other hand for Si/SiOx/SrTiO3(ITO) the photoconversion efficiency is lower than 1% because of the too large thickness of the SiOx interfacial layer.