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Active and Passive Electronic Components
Volume 14 (1991), Issue 3, Pages 151-161
http://dx.doi.org/10.1155/1991/47924

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

1Laboratoire de Chimie du Solide du CNRS (LCS), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
2Laboratoire d'Etude des Matériaux pour la Microélectronique (LEMME), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
3Ecole Polytechnique Fédérale de Lausanne, Institut de Physique Appliquée, PHB Ecublens, Lausanne CH-1015, Switzerland

Received 10 September 1990; Accepted 6 November 1990

Copyright © 1991 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.

Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.