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Volume 15, Issue 2, Pages 67-74

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Laboratoire de Chimie du Solide du CNRS, Université Bordeaux I, 351 Cours de la Libération, Talence 33405, France

Received 14 June 1992; Accepted 6 August 1992

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.