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Active and Passive Electronic Components
Volume 15, Issue 2, Pages 79-87
http://dx.doi.org/10.1155/1993/17302

The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics

Laboratoire de Chimie du Solide du CNRS, Université Bordeaux I, 351 Cours de la Libération, Talence 33405, France

Received 14 June 1992; Accepted 6 August 1992

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. J. Wen and G. Campet, “The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics,” Active and Passive Electronic Components, vol. 15, no. 2, pp. 79-87, 1993. https://doi.org/10.1155/1993/17302.