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Active and Passive Electronic Components
Volume 16, Issue 1, Pages 49-53

A New Mathematical Model for Cluster Calculation in Tetrahedrally Bonded Amorphous Semiconductors

Madrid, Spain

Received 3 April 1993; Accepted 27 April 1993

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Tetrahedraily bonded amorphous semiconductors exhibit a structure suitable for applying the so-called extended Hückel theory (EHT) to determine the electronic density of states by means of the cluster calculation. In the following, a new mathematical model based on EHT is established. The results obtained from this model have sufficient accuracy for applications and provide a useful methodology that combines adequately with the spectrum computations. Density of valence states has been obtained experimentally with monochromatized X-rays and the theoretical results obtained in this paper are in good agreement with these experiments.