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M. A. Grado Caffaro, M. Grado Caffaro, "An Algebraic Model for the Recombination Rate in Semiconductors", Active and Passive Electronic Components, vol. 15, Article ID 068260, 4 pages, 1993. https://doi.org/10.1155/1993/68260
An Algebraic Model for the Recombination Rate in Semiconductors
Abstract
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced in a unique way. The methodology introduced here represents an interesting tool to evaluate certain properties of semiconductors from a theoretical point of view.
Copyright
Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
