Active and Passive Electronic Components

Active and Passive Electronic Components / 1993 / Article

Open Access

Volume 15 |Article ID 068260 | https://doi.org/10.1155/1993/68260

M. A. Grado Caffaro, M. Grado Caffaro, "An Algebraic Model for the Recombination Rate in Semiconductors", Active and Passive Electronic Components, vol. 15, Article ID 068260, 4 pages, 1993. https://doi.org/10.1155/1993/68260

An Algebraic Model for the Recombination Rate in Semiconductors

Received12 Oct 1992
Accepted26 Oct 1992

Abstract

This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced in a unique way. The methodology introduced here represents an interesting tool to evaluate certain properties of semiconductors from a theoretical point of view.

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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