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Active and Passive Electronic Components
Volume 16 (1993), Issue 1, Pages 41-47

Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors

Laboratoire de Chimie du Solide du CNRS, University of Bordeaux I, 351 Cours de la Libdéation, Talence 33405, France

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negative thermoelectric power values. The metal-type conductivity occurs when the carrier concentration exceeds l019 cm–3 The correspondence between the values of the thermoelectric power and those of the carrier mobility and carrier concentration is given. Most interestingly this study puts into light the enhanced carrier mobility occurring for Ge-doped In2O3 samples compared with ITO samples (Sn-doped In2O3 widely used in optoelectronic devices.