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Active and Passive Electronic Components
Volume 16, Issue 1, Pages 41-47

Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors

Laboratoire de Chimie du Solide du CNRS, University of Bordeaux I, 351 Cours de la Libdéation, Talence 33405, France

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. J. Wen and G. Campet, “Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors,” Active and Passive Electronic Components, vol. 16, no. 1, pp. 41-47, 1993.